leshan radio comp any, ltd. esd protection diodes with ultra ? low capacitance the esd8l is designed to protect voltage sensitive components that require ultra ? low capacitance from esd and transient voltage events. excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for esd protection on designs where board space is at a premium. because of its low capacitance, it is suited for use in high frequency designs such as usb 2.0 high speed and antenna line applications. specification features: ? ultra low capacitance 0.4 pf ? low clamping v oltage ? small body outline dimensions: 0.039 x 0.024 (1.00 mm x 0.60 mm) ? low body height: 0.020 (0.5 mm) ? stand ? of f voltage: 5 v ? low leakage ? response t ime is typically < 1.0 ns ? iec61000 ? 4 ? 2 level 4 esd protection ? this is a pb ? free device mechanical characteristics: case: v oid-free, transfer-molded, thermosetting plastic epoxy meets ul 94 v ? 0 lead finish: 100% matte sn (t in) qualified max reflow tempera ture: device meets msl 1 requirements maximum ra tings rating symbol v alue unit iec 61000 ? 4 ? contact 2 (esd) air 8 15 kv t otal power dissipation on fr ? 5 board (note 1) @ t a = 25 c p d 150 mw storage t emperature range t stg ? 55 to +150 c junction t emperature range t j ? 55 to +125 c lead solder t emperature ? maximum (10 second duration) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.62 in. 260 c rev.o 1/4 ordering information 10000/tape&reel ps lesd8ls5.0ct5g shipping marking device sod882 1 2 lesd8ls5.0ct5g lesd8ls5.0ct5g transient voltage suppressors 12
leshan radio comp any, ltd. electrical characteristics (t a = 25 c unless otherwise noted) electrical characteristics device device marking v rw m (v) i r ( a) @ v rw m v br (v) @ i t (note 2) i t c (pf) v c (v) @ i ppmax =2.5a (note 3) v c max max min ma max max per iec61000 ? 4 ? 2 (note 4) lesd8ls5.0ct5g ps 5.0 1.0 6 1.0 0.5 18.4 figures 1 and 2 see below 2. v br is measured with a pulse test current i t at an ambient temperature of 25 c. 3. surge current waveform per figure 5. 4. for test procedure see figures 3 and 4 figure 1. esd clamping voltage screenshot positive 8 kv contact per iec61000 ? 4 ? 2 figure 2. esd clamping voltage screenshot negative 8 kv contact per iec61000 ? 4 ? 2 rev.o 2/4 lesd8ls5.0ct5g sy parameter mbol i pp maximum reverse peak pulse current v c clampi ng voltage @ i pp v rw m wo rking peak reverse voltage i r maximum re verse leakage current @ v rw m i t test current v br brea kdown voltage @ i t
leshan radio comp any, ltd. iec 61000 ? 4 ? 2 spec. level t est voltage (kv) first peak current (a) current at 30 ns (a) current at 60 ns (a) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 i peak 90% 10% iec61000 ? 4 ? 2 waveform 100% i @ 30 ns i @ 60 ns t p = 0.7 ns to 1 ns figure 3. iec61000 ? 4 ? 2 spec figure 4. diagram of esd test setup 50 50 cable tvs oscilloscope esd gun figure 5. 8 x 20 s pulse waveform 100 90 80 70 60 50 40 30 20 10 0 02 04 06 08 0 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as tha t point where the peak current decay = 8 s peak v alue i rs m @ 8 s half v alue i rs m /2 @ 20 s rev.o 3/4 lesd8ls5.0ct5g
leshan radio comp any, ltd. rev.o 4/4 lesd8ls5.0t5g suggested pad layout package outline dimension
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